https://www.selleckchem.com/Androgen-Receptor.html
This work, presents a study of lifetime of carriers due to intrinsic scattering mechanisms viz. electron-electron interaction (EEI), electron-phonon interaction (EPI) and phonon-phonon interaction (PPI) in a promising half-Heusler thermoelectric FeVSb. Using the full-GWmethod, the effect of EEI and temperature on the valence and conduction band extrema and band gap are studied. The lifetime of carriers with temperature are estimated at these band extrema. At 300 K, estimated value of lifetime at VBM (CBM) is ∼1.91 × 10-14 s (∼2.05 × 10
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